Taohua HUANG
,
Shengming ZHOU
,
Hao TENG
,
Hui LIN
,
Jun ZOU
,
Jianhua ZHOU
,
Jun WANG
材料科学技术（英）
γ-LiAlO2 single crystal is a promising substrate for GaN heteroepitaxy. In this paper, we present the growth of large-sized LiAlO2 crystal by modified Czochralski method. The crystal quality was characterized by highresolution X-ray diffraction and chemical etching. The results show that the as-grown crystal has perfect quality with the full width at half maximum (FWHM) of 17.7–22.6 arcsec and etch pits density of (0.3–2.2)×104 cm-2 throughout the crystal boule. The bottom of the crystal boule shows the best quality. The optical transmission spectra from UV to IR exhibits that the crystal is transparent from 0.2 to 5.5 μm and becomes completely absorbing around 6.7 μm wavelength. The optical absorption edge in near UV region is about 191 nm.
关键词:
γ-LiAlO2 crystal
,
提拉法
,
化学腐蚀
,
透过光谱
